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Micromagnetic simulation of magnetization reversal process and stray field behavior in Fe thin film wire

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2 Author(s)
Ohno, Munekazu ; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan ; Yoh, K.

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The magnetization reversal process of Fe thin film wire is studied based on two-dimensional micromagnetic simulation. It is demonstrated that the external field parallel to the width direction results in the formation of a 180° Néel wall, whereas the field applied to the thickness direction yields the Bloch-like walls, which turn into C-type walls in the residual state. These behaviors are explained by the anisotropic dependence of wall energy in the direction of the external field. The stray field during this process is analyzed in detail.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 12 )