By Topic

Indices of refraction of AlGaAsSb by an optical waveguide technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mozume, T. ; National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2-1, Tsukuba 305-8568, Japan ; Simoyama, T. ; Ishikawa, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Nearly lattice-matched AlxGa1-xAsySb1-y alloys with Al composition x≫0.7 were grown by molecular beam epitaxy. The indices of refraction for a series of alloy compositions were measured. The Al composition was determined by x-ray diffraction (XRD) measurements assuming that the AlxGa1-xAs film that was grown prior to the growth of the AlxGa1-xAsySb1-y layer has the same Al composition. The arsenic to antimony ratio was determined by (004) symmetrical and (115) asymmetric reflection XRD rocking curve measurements. The refractive index and thickness were obtained by prism coupler measurements. A symmetric 75° Si prism coupler was employed to excite the waveguide modes with wavelengths of 1319 and 1540 nm. The shift in the measured indices of refraction from that of the calculated values revealed a deviation from the interpolating scheme based on the binary or ternary alloy data.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 11 )