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Design and simulation of deep-well GaAs-based quantum cascade lasers for 6.7 μm room-temperature operation

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4 Author(s)
Gao, X. ; Department of Electrical and Computer Engineering, University of Wisconsin—Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691, USA ; DSouza, M. ; Botez, D. ; Knezevic, I.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2820039 

We present the design and simulation of a GaAs-based quantum cascade laser (QCL) emitting at 6.7 μm, the shortest room-temperature lasing wavelength projected to date for GaAs-based QCLs. This is achieved by introducing compressive strain only in the active quantum wells, where the optical transition occurs. A Monte Carlo simulation including both Γ- and X-valley transport demonstrates that the proposed QCL achieves room-temperature lasing at a threshold-current density of 14 kA/cm2, lower than that of the conventional 9.4 μm QCL (16.7 kA/cm2). Furthermore, the electron temperature at 300 K lattice temperature is similar to that of the 9.4 μm device.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 11 )

Date of Publication:

Dec 2007

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