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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:102 Issue:10 Help

Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy

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6 Author(s)
Suzuno, M. ; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan ; Ugajin, Y. ; Murase, S. ; Suemasu, T.
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Intentionally undoped p-type β-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of β-FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the β-FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.

Published in:
Journal of Applied Physics  (Volume:102 ,  Issue: 10 )

Date of Publication: Nov 2007

Page(s):
103706 - 103706-5
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2816230
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2007

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