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Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

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10 Author(s)
Hwang, J.S. ; National Research Laboratory for Nano-Bio-Photonics, BK21 Physics Program and Department of Physics, Chungbuk National University, Cheongju 361-763, Korea ; Gokarna, A. ; Cho, Yong‐Hoon ; Son, J.K.
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Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates.

Published in:

Journal of Applied Physics  (Volume:102 ,  Issue: 1 )

Date of Publication:

Jul 2007

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