IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Journal of Applied Physics ...> Volume:102 Issue:1 Help

Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Hwang, J.S. ; National Research Laboratory for Nano-Bio-Photonics, BK21 Physics Program and Department of Physics, Chungbuk National University, Cheongju 361-763, Korea ; Gokarna, A. ; Cho, Yong‐Hoon ; Son, J.K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2749281 

Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates.

Published in:
Journal of Applied Physics  (Volume:102 ,  Issue: 1 )

Date of Publication: Jul 2007

Page(s):
013508 - 013508-5
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2749281
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2007

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.