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Structural, magnetic, and ferroelectric properties of multiferroic BiFeO3 film fabricated by chemical solution deposition

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2 Author(s)
Naganuma, Hiroshi ; Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan ; Okamura, Soichiro

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Polycrystalline BiFeO3 film has been fabricated by a chemical solution deposition on Pt/Ti/SiO2/Si(100) substrates. A ferroelectric hysteresis loop showed a high remanent polarization of 47 μC/cm2 at room temperature. Leakage current density was on the order of 10-1 A/cm2 at 100 kV/cm, indicating the high leakage current density in the present BiFeO3 film. The leakage current mechanism could be considered as follows: Ohmic conduction at low electric field and Poole-Frenkel trap-assisted conduction appeared as the electric field increased, and space-charge-limited current started at a high electric field. Weak ferromagnetism was observed at room temperature, and magnetic coercivity increased to 0.5 kOe with small remanent magnetization of 2 emu/cm3 at 10 K. In order to investigate the magnetoelectric effect of the BiFeO3 film, the ferroelectric hysteresis loop was measured under the magnetic field of 5 kG at room temperature.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 9 )

Date of Publication:

May 2007

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