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Influence of IrMn exchange bias layer on the magnetic properties of half-ring NiFe micron structures

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7 Author(s)
Chang, L.J. ; Institute of Physics, Academia Sinica, Taipei, Taiwan 115, Republic of China and Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan 202, Republic of China ; Chen, A.L. ; Cheng, K.W. ; Yu, C.
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The magnetization reversal behavior in half-ring NiFe structures and the influence of IrMn exchange bias layer was studied in this experiment. Two-step switching behavior, as in the ring shape, was observed when external field was in the short axis for single half-ring films. For NiFe–IrMn double layer structures, the unidirection anisotropy could be controlled by field cooling the samples. The exchange field strength did not follow a cosine curve when the external field was rotated in the sample plane. It could be attributed to the competition between the shape and the exchange anisotropies. When the strength of exchange field was strong, a single-step switching was observed. Two-step switching was retained for weaker exchange coupling.

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Journal of Applied Physics  (Volume:101 ,  Issue: 9 )