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Enhancement of exchange field in CoFe/IrMn by Os/Cu buffer layer

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4 Author(s)
Peng, Tai-Yen ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan ; Chen, San-Yuan ; Lo, C.K. ; Yao, Y.D.

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Enhancement of exchange field (Hex) and thermal stability of the textured CoFe/IrMn with Os/Cu buffer layer and Os diffusion barrier layer were studied. As revealed by x-ray Diffraction (XRD), an Os (0002) surface mesh was observed to form on Cu (100)/Si (100). The growth of CoFe (111)/IrMn (111) on such a template is parallel to the Os (0002). With the Os/Cu buffer layer, the CoFe/IrMn presents an enhancement of 70 Oe on Hex larger than that without Os/Cu. The Hex of the textured sample was 230 Oe at room temperature and it was increased to 330 Oe after 250 °C annealing. When the temperature reached 350 °C, Hex vanished. The increment of the temperature at which the textured and the nontextured sample obtaining their maximum Hex and the vanishing temperature of Hex were 50 and 75 °C, respectively. Furthermore, the CoFe/Os (d)/IrMn slowed down the Hex degradation. The sample with d=0.3 nm obtained its maximum Hex- at 250 °C and vanished when it reached 400 °C. The combination of CoFe/IrMn with Os/Cu buffer layer and Os barrier layer made the Hex higher and also better thermal stability.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 9 )