By Topic

Electrical manipulation of spin-orbit coupling in semiconductor heterostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sih, Vanessa ; Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 ; Awschalom, D.D.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The spin-orbit interaction offers an avenue for the electrical generation and manipulation of electron spin polarization in semiconductors without magnetic materials or magnetic fields. In semiconductor heterostructures, the spin-orbit coupling modifies the electron g factor and introduces momentum-dependent spin splittings. In addition, spin-orbit coupling enables the electrical generation of spin polarization through these spin splittings and the spin Hall effect. Here we present an overview of recent measurements of spin dynamics, spin splittings, and electrically generated spin polarization. We demonstrate manipulation of the spin-orbit coupling using electric and magnetic fields to change the orbital motion of the electrons and using strain and quantum confinement to tune the spin splittings in semiconductor heterostructures.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 8 )