Cart (Loading....) | Create Account
Close category search window
 

Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k-p calculations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Bouragba, T. ; LASMEA, 6602UBP/ CNRS, 24 Avenue des Landais, F-63177, Aubière Cedex France ; Mihailovic, M. ; Reveret, F. ; Disseix, P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2719289 

The effects of thermal annealing for In0.25Ga0.75As1-yNy/GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical absorption. The QW transition energies have been calculated by using a ten-band k-p model including the band anticrossing model for the description of the InGaAsN band gap variation. The modification of the In concentration profile due to In-Ga interdiffusion during thermal annealing is taken into account through the Fick law. A good agreement is obtained between calculated and experimental energies of optical transitions. Our results show that the In-Ga interdiffusion phenomenon observed in a nitrogen free sample is moderately enhanced by the introduction of nitrogen. The blueshift of optical transitions induced by the annealing process is the result of both In-Ga interdiffusion and rearrangement of local nitrogen environment.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 7 )

Date of Publication:

Apr 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.