By Topic

Oxygen-dependent phosphorus networking in ZnO thin films grown by low temperature rf sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pugel, D.Elizabeth ; Department of Physics, University of Maryland, College Park, Maryland 20742 ; Vispute, R.D. ; Hullavarad, S.S. ; Venkatesan, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Radio frequency (rf) sputtered films of 10 at. % P2O5-doped zinc oxide (ZnO) were deposited at temperatures (Td) below the sublimation point of P2O5 (Td≪350 °C) and at a range of oxygen pressures p(O2). Ultraviolet-visible optical transmission measurements, x-ray photoelectron spectroscopy (XPS), and x-ray diffraction were used to examine the effects of p(O2) during deposition on the band gap and on the bonding behavior of phosphorus. At both deposition temperatures studied (room temperature with unintentional heating and 125 °C), an increase in phosphorus concentration with increasing p(O2) was observed. However, the dependence of the band gap behavior on p(O2) was observed to be dramatically different for the two deposition temperatures: room-temperature-deposited films show a redshift while films deposited at 125 °C show a blueshift. Analysis of the oxygen 1s XPS peak shows a progressive formation of nonbridging (Zn–O–P) bond networks for room temperature films, whereas films grown at 125 °C show increased (P–O–P) bond networks with increasing p(O2). This indicates that a small degree of thermal activation considerably modifies the bonding behavior of phosphorus in ZnO. Implications of these results for the use of phosphorus as a p-type dopant for Z- nO are discussed.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 6 )