Cart (Loading....) | Create Account
Close category search window

Multiferroic BiFeO3 thin films deposited on SrRuO3 buffer layer by rf sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zheng, R.Y. ; Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117576, Singapore ; Gao, X.S. ; Zhou, Z.H. ; Wang, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

SrRuO3 (SRO) acts as an effective buffer layer for growth of multiferroic BiFeO3 (BFO) thin films deposited on Pt/TiO2/SiO2/Si substrates by radio frequency sputtering. Phase identification by using x-ray diffraction and texture studies by using atomic force microscopy show that the SRO buffer layer promotes crystallization and formation of the perovskite phase at lowered temperature. It significantly reduces the leakage current of multiferroic BFO films, giving rise to a much improved square ferroelectric hysteresis loop, in contrast to the poor loop for BFO on bare Pt/TiO2/SiO2/Si substrate. A much enlarged remnant polarization (2Pr) of 144 μC/cm2 and a coercive field (Ec) of 386 kV/cm were obtained with the BFO thin film deposited on SRO/Pt/TiO2/SiO2/Si at 600 °C. The BFO thin film with SRO buffer layer also shows a large nonvolatile polarization (ΔP=Psw-Pnsw) of 122 μC/cm2 at 20 μs, which promises excellent performance for random access memories. Further interestingly, it exhibits - little polarization fatigue up to 5×1010 switching cycles, at a relatively high voltage of 10 V, although a notable degradation of polarization is shown at the low voltage of 6 V, indicating weak domain pinning. The multiferroic thin film demonstrates a weak ferromagnetic loop with a saturation magnetization (Ms) of 1.92 emu/cm3 and coercivity (Hc) of 325 Oe.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 5 )

Date of Publication:

Mar 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.