Cart (Loading....) | Create Account
Close category search window

The effect of Si doping on the electrical properties of B12As2 thin films on (0001) 6H-SiC substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Xu, Zhou ; Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 ; Edgar, J.H. ; Look, D.C. ; Baumann, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The ability to control the resistivity of the wide band gap semiconductor B12As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12As2 thin films from 7×1018 to 7×1021 at./cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p-type B12As2 films from 2×105 to 10 Ω cm. The resistivities of the B12As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12As2 films with annealing.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 5 )

Date of Publication:

Mar 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.