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Dissociation of Si+ ion implanted and as-grown thin SiO2 layers during annealing in ultra-pure neutral ambient by emanation of SiO

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3 Author(s)
Beyer, V. ; Forschungszentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, D-01314 Dresden, Germany ; von Borany, J. ; Heinig, K.-H.

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We have observed a very inhomogeneous dissociation of stoichiometric and non-stoichiometric thin SiO2 layers (thermally grown on Si substrates) during high temperature annealing at a low partial pressure of oxygen. During this process some silicon of the (100)Si substrate and, in case of Si ion implantation, and additionally, excess Si is consumed. The SiO2 dissociation has been studied by electron microscopy and Rutherford backscattering spectrometry. Large holes (≫1 μm) in non-implanted oxide layers have been observed which evolve probably from defects located at the Si/SiO2 interface. For Si implanted SiO2 additionally the formation of voids within the oxide during annealing has been observed preferably at the position of the implanted Si excess. Oxygen vacancies are possibly emitted from Si/SiO2 interfaces into the oxide and migrate through SiO2 with long-range distortions of the oxide network. In that way the hole and void formation in the oxide can be explained by oxygen-vacancy formation, migration and silicon-monoxide (SiO) emanation. As a driving force for growth of the large holes we identified oxygen diffusion from the Si/SiO2 interface to the bare Si surface. This surface is a sink of oxygen diffusion due to the emanation of volatile SiO, whereas the - Si/SiO2 interface serves as an oxygen source. The predicted mechanism is consistent with the geometry of the holes in the SiO2 layer.

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Journal of Applied Physics  (Volume:101 ,  Issue: 5 )