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Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

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6 Author(s)
Kanzaki, Kenichi ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan ; Suzuki, Satoru ; Inokawa, H. ; Ono, Y.
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Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )