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Nickel silicide formation using multiple-pulsed laser annealing

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6 Author(s)
Setiawan, Y. ; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore ; Lee, P.S. ; Pey, K.L. ; Wang, X.C.
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The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni(Ti)/Si system was studied. A layered structure consisting of both crystalline NiSi2 and Ni-rich Ni–Si amorphous phases with a protective TiOx overlayer was formed after five-pulsed laser annealing at 0.4 J cm-2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm-2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )

Date of Publication:

Feb 2007

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