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Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced states

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4 Author(s)
Chen, J.F. ; Department of Electrophysics, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China ; Chiang, C.H. ; Hsieh, P.C. ; Wang, J.S.

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Strain relaxation in GaAs/In0.2Ga0.8As/GaAs structures is investigated by analyzing relaxation-induced traps. Strain relaxation is shown to cause carrier depletion by the induction of a 0.53 eV trap in the top GaAs layer, a 0.13 eV trap in the InGaAs layer, and a 0.33 eV trap in the neighboring lower GaAs layer. The 0.53 eV trap which exhibits a logarithmic function of transient capacitance is attributed to threading dislocations. The 0.33 eV trap exhibits an exponential transient capacitance, suggesting a GaAs point defect as its origin. Given its activation energy, it is assigned to the EL6 in GaAs, commonly considered to be Asi-VGa complexes. This trap and the 0.13 eV trap are regarded as the same, since their energy difference is comparable to the optically determined conduction-band offset. The spatial location of this trap correlates with that of misfit dislocations. Accordingly, the production of this trap is determined from the mechanism of strain relaxation. A likely mode of strain relaxation is deduced from the locations of these traps.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )