By Topic

Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Loke, W.K. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, Nanyang Avenue, Singapore 639798, Republic of Singapore ; Yoon, S.F. ; Tan, K.H. ; Wicaksono, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Deep-level transient spectra (DLTS) and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967/GaAs and Ga0.96In0.04N0.028As0.967Sb0.005/GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular beam epitaxy. Two hole-trap levels were observed in the DLTS spectra of the GaInNAs sample with activation energies of 0.152 and 0.400 eV (labeled as H-1 and H-2 peak, respectively). The lower activation energy is believed to be associated with nitrogen-related defects and the higher activation energy is associated with arsenic antisite defects (AsGa). Following the incorporation of Sb into GaInNAs, the H-1 peak vanished from the DLTS spectra of the GaInNAsSb sample, and the AsGa defect-related DLTS signal was significantly reduced. Analysis of the DLTS data also showed that the trap concentration related to AsGa was reduced from 2.15×1015 to 2.58×1014 cm-3. The DLTS results are in good agreement with the photoresponsivity results, in which the GaInNAsSb sample showed 10× higher photoresponse compared to the GaInNAs sample. This indicates the incorporation of Sb into GaInNAs has effectively improved the p- -i-n photodetector device performance.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )