By Topic

Modeling photoreflectance of quantum well heterostructures: A comprehensive approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mayhew, Laurel M. ; Department of Physics, University of Massachusetts at Amherst, Amherst, Massachusetts 01003 ; Trivedi, Deborah Lehr ; Anderson, Neal G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We present a comprehensive approach to modeling the photoreflectance (PR) spectra of semiconductor quantum wells embedded in layered heterostructures. Near-gap PR spectra are obtained directly from the calculated variation of surface reflectance spectra induced by modulation of an internal electric field. The field-dependent reflectance spectra are themselves obtained from a transfer matrix model of a quantum well heterostructure (QWH) in which the quantum well layer is treated in detail using electric-field-dependent optical absorption calculations and all surrounding higher-gap layers are treated as lossless dielectric slabs. The model is described in detail and is applied to unstrained GaAs/AlGaAs and compressively strained InGaAs/GaAs single-well QWHs for which both experimental data and other calculations are available for comparison. This model can serve as a tool for interpretation of experimental PR spectra, and should be particularly useful for analysis of dense spectra with overlapping features that would be difficult to analyze using empirical fitting schemes. The approach can be used to model electroreflectance without modification.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )