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Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection

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4 Author(s)
Liu, W. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Zhang, D.H. ; Huang, Z.M. ; Fan, W.J.

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The n-type InGaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) with asymmetric graded barriers for broadband detection has been investigated theoretically based on the eight-band kp model. It is found that the intersubband transitions from the ground state to all bound and continuum excited states contribute to the overall absorption and the bound-to-continuum (B-to-C) transitions dominate. The superposition of the bound-to-bound and B-to-C transitions results in a broad detection bandwidth, and both the detected wavelength and bandwidth can be tuned by the applied voltage. The analysis method is also applicable to the GaAs/InxGa1-xAs/InyGa1-yAs QWIP with step quantum wells. The calculated results are consistent with the reported experimental observations.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )