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Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate

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7 Author(s)
Hums, C. ; Fakultät für Naturwissenschaften, Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39016 Magdeburg, Germany ; Finger, T. ; Hempel, T. ; Christen, J.
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A strong intensity modulation is found in spatially and angular resolved photoluminescence spectra of InGaN/GaN heterostructures and quantum wells epitaxially grown on Si(111) substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN/Si and the Air/InGaN interfaces. It can be used for a wavelength stabilization of the sample upon temperature change and, e.g., in the case of light emitting diodes, to additionally reduce the blueshift at increasing injection currents. A simple geometric approach has been chosen to calculate the influence of layer thickness, absorption and refractive indices, as well as detection angle. The cavity can be described quantitatively by a simple three layer Fabry-Perot model. An analytical expression is derived for the external luminescence line shape. Microphotoluminescence measurements at samples with the silicon substrate locally removed corroborate the model.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )