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Resonant control of the characteristic temperatures T0 and T1 of AlInGaAs 0.8 μm semiconductor lasers with delta-doped tunneling quantum wells

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1 Author(s)
Fekete, D. ; Department of Physics, Technion-Israel Institute of Technology, Haifa 32000, Israel and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel

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It is demonstrated experimentally that AlInGaAs/GaAs lasers with Te n-type δ-doped resonant tunneling quantum wells (QWs), tuned to operate at resonance at elevated temperature, exhibit higher external efficiency and improved temperature stability. These lasers were designed to ensure that the decrease in the band bending (which results from the increased current density at threshold due to the elevated temperature) would cause the ground-state levels in the two QWs to coincide, thus obtaining enhanced coupling between the QWs. The enhanced coupling increases the efficiency and reduces the transparency current which curbs the increase of the threshold current due to the elevated temperature.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 3 )