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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:101 Issue:2 Help

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

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6 Author(s)
Ryu, Seong-Wan ; Department of Electrical Engineering and Computer Sciences, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea ; Choi, Yang-Kyu ; Mo, Chan Bin ; Hong, Soon Hyung
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This paper presents a detailed study on the effect of different thicknesses of HfO2 high-k interfacial layer between double-stacked layers of Ag nanocrystals formed by a chemical synthesis and thermal decomposition method. To confirm the formation and purity of the well-ordered Ag nanocrystals with a high density (2.7×1012 cm-2), transmission electron microscopy and x-ray diffraction analysis were used. After fabricating metal-oxide-silicon structures with 2 and 6 nm interfacial HfO2 and the double-stacked Ag nanocrystals, a program efficiency and retention time characteristics were investigated.

Published in:
Journal of Applied Physics  (Volume:101 ,  Issue: 2 )

Date of Publication: Jan 2007

Page(s):
026109 - 026109-3
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2430785
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2007

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