By Topic

Interdiffusion induced changes in the photoluminescence of InXGa1-XAs/GaAs quantum dots interpreted

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Biswas, Dipankar ; Institute of Radiophysics and Electronics, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India ; Kumar, Subindu ; Das, Tapas

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Interdiffusion in InXGa1-XAs/GaAs quantum dots (QDs) may occur during high temperature growth and processing, which may create problems in the ultimate device performance. It is simulated through successive high temperature annealing, and the changes at each stage are studied through photoluminescence (PL). Significant changes are observed in the peak energy, linewidth, and intensity of the PL spectra. These have been attributed to relaxation of strain, changes in the composition of InXGa1-XAs, and size distribution of the QDs, which fail to establish proper understanding qualitatively and quantitatively. In this Communication we present appropriate interpretations of the changes in the observed PL through quantum mechanical concepts and computations.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 2 )