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Defect states in the high-dielectric-constant gate oxide HfSiO4

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4 Author(s)
Xiong, K. ; Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom ; Du, Y. ; Tse, K. ; Robertson, J.

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Hafnium silicate has a high dielectric constant and is a leading candidate to act as a gate dielectric. The defect energy levels have been calculated. The oxygen vacancy is found to give rise to Si-like levels which lie within the band gap of Si. The vacancy states are very localized and are localized on the neighboring Si sites. A second defect level high in the oxide gap is localized on the Hf sites. The behavior of ZrSiO4 is similar.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 2 )