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Investigation of the interaction of a laser pulse with a preformed Gaussian Sn plume for an extreme ultraviolet lithography source

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5 Author(s)
Tao, Y. ; Department of Mechanical and Aerospace Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 and the Center for Energy Research, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 ; Tillack, M.S. ; Harilal, S.S. ; Sequoia, K.L.
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The interaction of a laser pulse with a Sn preplasma formed by a low energy prepulse was investigated for an extreme ultraviolet (EUV) lithography light source. A much lower ion kinetic energy and nearly the same conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV light were simultaneously observed as compared with those from the direct interaction with a solid surface. The reason comes from the interaction of the laser pulse with a smooth preplume induced by the prepulse. The density profile of the preplume was measured with time-resolved shadowgraphy and could be fitted with a Gaussian function. The energy of the ions located at the flux peak Ep scales with the length of the preplume ls as Ep∝1/ls. Laser absorption in the low-density preplume and ion acceleration during plasma expansion are discussed. This result provides a general way to control particle energy from a laser plasma interaction.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 2 )