Cart (Loading....) | Create Account
Close category search window

Correlation of gas-phase composition with film properties in the plasma-enhanced chemical vapor deposition of hydrogenated amorphous carbon nitride films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Liu, Dongping ; Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 ; Zhou, Jie ; Fisher, Ellen R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Hydrogenated amorphous carbon nitride (a-C:N:H) films were synthesized from CH4/N2, C2H4/N2, and C2H2/N2 gas mixtures using inductively coupled rf plasmas. These deposition systems were characterized by means of optical emission spectroscopy and mass spectrometry (MS). The effects of varying the nitrogen partial pressure on film growth and film properties were investigated, and experimental results indicate that the hydrocarbon species produced in the gas phase contribute directly to film growth. Although the CN radical is formed in the mixed gas systems, it does not appear to be a factor in controlling the rate of film deposition. The nature and energy of the ions in these systems were explored with MS. No clear dependence of ion energy on mass or plasma conditions was observed. Although films formed in the methane and ethylene systems were relatively smooth, a-C:N:H films prepared from acetylene-nitrogen plasmas had comparatively rough surfaces, most likely as a result of the strong gas-phase polymerization process produced by the ion-molecule reactions, CnHy++C2H2C(n+2)Hy++H2 (n≫1, y=1–3). Correlations between the a-C:N:H growth processes and the gas-phase plasma diagnostic data are d- iscussed.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 2 )

Date of Publication:

Jan 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.