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Noncontact, nonintrusive photocarrier (PCR) and photothermal radiometry (PTR) as well as Raman spectroscopy were used to characterize GaSb and Te-doped GaSb wafers used to grow GaSb-based heterostructures for infrared applications. The results indicated excellent sensitivity of PTR and PCR to the Te distribution on the wafer surface. The results from the three methodologies were consistent and indicated that the Te was segregated toward the edge of the GaSb wafer. The PTR and PCR laser-based techniques show great potential advantages to characterize the homogeneity of the Te doping in the GaSb wafers and for other steps in the fabrication of semiconductor heterostructures.