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Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4/SiO2 membranes

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7 Author(s)
Cherednichenko, S. ; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Fysikgrand 3, SE-412-96 Gothenburg, Sweden ; Drakinskiy, V. ; Baubert, J. ; Krieg, J.-M.
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 12 )

Date of Publication:

Jun 2007

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