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High density Ru nanocrystal deposition for nonvolatile memory applications

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2 Author(s)
Farmer, Damon B. ; School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 ; Gordon, Roy G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2740351 

Arrays of Ru nanocrystals 1–4 nm in diameter are deposited via a hybrid chemical vapor deposition/atomic layer deposition reaction. The nanocrystal density is found to depend sensitively on the nucleating surface. A maximum density of (7–8)×1012 cm-2 is achieved on Al2O3. Incorporation of these nanocrystals in floating-gate memory cells results in C-V curves that exhibit large, counterclockwise hysteresis. Leakage current analysis reveals Coulomb blockade phenomena, Frenkel-Poole emission, and space-charge-limited conduction. This analysis allows for the determination of nanocrystal size and connectivity. Charge storage converges to approximately 50% of the maximum value after two days. The corresponding loss mechanisms are discussed.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 12 )

Date of Publication:

Jun 2007

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