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Microwave enhanced ion-cut silicon layer transfer

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9 Author(s)
Thompson, D.C. ; School of Materials, Arizona State University, Tempe, Arizona 85287 ; Alford, T.L. ; Mayer, J.W. ; Hochbauer, T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2737387 

Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 11 )

Date of Publication:

Jun 2007

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