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Relocation effect and polarization mixing of surface acoustic waves in AlN-GaN bilayers on Al2O3(0001) substrates

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2 Author(s)
Takagaki, Y. ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany ; Chilla, E.

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On the surface capped by an AlN-GaN bilayer, the particle displacements of surface acoustic waves (SAWs) are localized in the short-wavelength regime in the buried GaN layer instead of the overlaying AlN layer as a consequence of the significantly faster propagation of sound in AlN than in GaN. We numerically explore this relocation effect for Al2O3(0001) substrates, which are the commonly used substrate for group-III nitrides. We show that the critical wavelength for the relocation effect can be manipulated in a wide range by varying the thickness of the AlN layer owing to the moderate sound velocity in Al2O3. We also investigate the influences of the polarization mixing on the dispersion of SAWs. The SAW dispersion in the layered system is interpreted in terms of the anticrossing of relevant acoustic modes.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 11 )