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Electromigration (EM) is a major failure mechanism in ultralarge-scale integration interconnections. Various atomic migration mechanisms due to the electron wind force, temperature gradients, and thermomechanical stress gradients are involved during an EM failure process. In this study, a methodology that combines a Monte Carlo algorithm and finite element analysis is developed to study the underlying dynamic physical processes of EM, including void nucleation and void growth. The microstructure inhomogeneity of an interconnect thin film and the different atomic diffusivities along various diffusion paths in interconnections are also considered in this three-dimensional dynamic simulation.