By Topic

Measurement of the thermal conductance of silicon nanowires at low temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Bourgeois, Olivier ; Centre de Recherches sur les Très Basses Températures, CNRS, laboratoire associé à l’Université Joseph Fourier et à l’Institut National Polytechnique de Grenoble, BP 166, 38042 Grenoble Cedex 1, France ; Fournier, Thierry ; Chaussy, Jacques

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2400093 

We have performed thermal conductance measurements on individual single-crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on silicon on insulator substrate. We measure the thermal conductance of the phonon waveguide by the method. The cross section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1 K. Above 1.3 K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 1 )