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Effect of crystallization process on the ferroelectric properties of sol-gel derived BiScO3PbTiO3 thin films

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5 Author(s)
Wen, Hai ; State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China ; Wang, Xiaohui ; Deng, Xiangyun ; Sun, Tieyu
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The dielectric and ferroelectric properties of sol-gel derived BiScO3PbTiO3 thin films prepared by two different kinds of crystallization processes were studied. The film prepared by a single crystallization had a higher remanent polarization and dielectric constant than the one prepared by a multiple crystallization. The remanent polarization and dielectric constant were 50 μC/cm2 and 1609 for the single crystallization sample, and 40 μC/cm2 and 1429 for the multiple crystallization one. The investigation of the Rayleigh law revealed that the film prepared by a multiple crystallization, processed more irreversible domain wall motion contribution and less reversible contribution with respect to the one by a single crystallization. This was attributed to the layer-to-layer interfaces generated during the multiple crystallization processing, which acted as energy barrier and had a pinning effect on the domain wall motion, resulting more irreversible domain wall motion.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 1 )