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An electron paramagnetic resonance study of n-type Zn1-xMnxO: A diluted magnetic semiconductor

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5 Author(s)
Ben Mahmoud, A. ; Institut des NanoSciences de Paris, UMR 7588-CNRS, Universités Paris 6&7, 140 rue de Lourmel, 75015 Paris, France and Laboratoire Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences, Cité Erriadh, 6079 Gabès, Tunisia ; von Bardeleben, H.J. ; Cantin, J.L. ; Chikoidze, E.
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We present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1-xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire concentration range with an effective exchange integral of J/kB=-21.8 K for x≤0.16 much stronger than in the CdMn(S,Se,Te) series. We observe deviations from the Curie-Weiss behavior for concentrations above x=0.16 and show this to be a “universal” behavior of II-VI diluted magnetic semiconductors. Our results demonstrate that AF interactions are dominating in n-type Zn1-xMnxO (x≫0.07) with a carrier concentration of 1018 cm-3 contrary to previous claims. These AF interactions are responsible for high spin freezing temperatures and absence of magnetic long range order.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 1 )