By Topic

An electron paramagnetic resonance study of n-type Zn1-xMnxO: A diluted magnetic semiconductor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ben Mahmoud, A. ; Institut des NanoSciences de Paris, UMR 7588-CNRS, Universités Paris 6&7, 140 rue de Lourmel, 75015 Paris, France and Laboratoire Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences, Cité Erriadh, 6079 Gabès, Tunisia ; von Bardeleben, H.J. ; Cantin, J.L. ; Chikoidze, E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2402097 

We present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1-xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire concentration range with an effective exchange integral of J/kB=-21.8 K for x≤0.16 much stronger than in the CdMn(S,Se,Te) series. We observe deviations from the Curie-Weiss behavior for concentrations above x=0.16 and show this to be a “universal” behavior of II-VI diluted magnetic semiconductors. Our results demonstrate that AF interactions are dominating in n-type Zn1-xMnxO (x≫0.07) with a carrier concentration of 1018 cm-3 contrary to previous claims. These AF interactions are responsible for high spin freezing temperatures and absence of magnetic long range order.

Published in:

Journal of Applied Physics  (Volume:101 ,  Issue: 1 )