Transmission electron microscopy (TEM) and high-resolution x-ray diffraction were used to study the crystalline quality of GaAs layers grown by liquid phase epitaxial lateral overgrowth (ELO) on SiO2-masked (001) GaAs substrates. A low-angle grain boundary with a well-organized set of dislocations accommodating the misorientation of tilted ELO wings was found at the coalescence front of ELO layers. Similar behavior is often reported for GaN on sapphire ELO structures. Unlike the GaN case, however, no dislocations were found above edges of the mask, which is explained by the much smaller wing tilt angle in our case. The geometry of the dislocation network and analysis of thickness fringes on TEM images were used to measure misorientation of merging ELO wings. The values obtained are in good agreement with those determined by x-ray diffraction.