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Low-supply-noise low-power embedded modular SRAM

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6 Author(s)
Schultz, K.J. ; Northern Telecom Electron. Ltd., Nepean, Ont., Canada ; Gibbins, R.G. ; Fujimoto, J.S. ; Phillips, R.S.
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A low-noise, low-power embedded modular SRAM is described. A 512×15 configuration at 3.3 V generates a maximum of 8.2 mA/ns dI/dt and consumes 0.24 mW/MHz, the lowest power dissipation ever reported for a modular embedded memory. Results are achieved using a pulsed divided word line architecture, with internal cascaded clocks, weak static sensing, low-noise buffers and flip-flops and low-noise low-power decoding techniques. Alternatives in the core cell, sense amplifier and read/write architecture designs are discussed. Circuit details, as well as experimental and simulation results, are presented

Published in:

Circuits, Devices and Systems, IEE Proceedings -  (Volume:143 ,  Issue: 2 )