By Topic

Improved dielectric properties of bismuth-doped LaAlO3

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Zylberberg, Joel ; Department of Chemistry, Simon Fraser University, Burnaby, British Columbia V5A1S6, Canada ; Ye, Zuo-Guang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2358827 

Bismuth-doped LaAlO3 was prepared in the form of solid solution, La(1-x)BixAlO3 (0≤x≤0.2), by solid-state reactions. The materials were characterized by x-ray diffraction and dielectric spectroscopy. With increasing bismuth amount (x), the dielectric constant increases from 31.6 for pure LaAlO3 to 34.6 for x=0.2, while the loss tangent drops from 0.03 to 0.004 (f=100 Hz). The frequency dispersion of the dielectric constant is attenuated. The improved dielectric properties in the Bi-doped LaAlO3 are attributed to the high polarizability of Bi3+ ion with a lone electron pair.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 8 )