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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:100 Issue:8 Help

A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

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4 Author(s)
Roldan, A.M. ; Departament d’Enginyeria Electrónica, Eléctrica i Automática, Universitat Rovira i Virgili, 43007 Tarragona, Spain ; Nae, B. ; Moldovan, O. ; Iniguez, B.

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In this paper, we present an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Radio-frequency and noise performances are calculated using an active transmission line method. A comparison is made between classical and quantum charge control and between drift diffusion and hydrodynamic models.

Published in:
Journal of Applied Physics  (Volume:100 ,  Issue: 8 )

Date of Publication: Oct 2006

Page(s):
084320 - 084320-12
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2360379
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2006

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