By Topic

Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yuan, Zhizhong ; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China ; Dongsheng Li ; Minghua Wang ; Chen, Peiliang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2358301 

Room temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1 h in flowing N2 before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb3+ in the wavelength from 470 to 625 nm for both kinds of films. Moreover, after postannealing at 1000 °C, the integrated PL intensity of Tb3+:SiNx is much higher than that of Tb3+:SiOx. The energy transfer from the defect related energy levels to the Tb3+ ions will enhance the 5D47Fk (k=3–6) luminescence of Tb3+ ions.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 8 )