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Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition

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3 Author(s)
Aggarwal, S. ; Silicon Technology Development, Texas Instruments, Inc., 13121 TI Boulevard, MS 365, Dallas, Texas 75243 ; Udayakumar, K.R. ; Rodriguez, J.A.

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(Pb,Zr)TiO3 (PZT) films have been prepared by metal organic chemical vapor deposition on 200 mm wafers. Phase pure perovskite films were deposited in a self-correcting region where the Pb stoichiometry is relatively insensitive to increasing Pb content in the gas phase. Films deposited with Pb flows lower than those used in the self-correcting region showed second phase ZrO2 whereas films deposited at Pb flows higher than those used in the self-correcting region showed second phase PbO. The PZT grains are columnar, extending from the bottom electrode to the top electrode. In the self-correcting region, PZT films of 70 nm nominal thickness show good ferroelectric behavior with switched polarization of ∼40 μC/cm2 at 1.5 V and saturation voltage of ∼1.2 V. The films have an average roughness of ∼4 nm with grain size of ∼700 Å. The impact of the deposition parameters such as deposition temperature, pressure, precursor flow, and oxygen flow during deposition on the self-correcting region was investigated. Increasing the deposition temperature increases the width of the self-correcting region whereas increasing the oxygen flow narrows it. Pressure and the precursor flow do not impact the width although variation in pressure does shift the location of the self-correcting region.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 6 )

Date of Publication:

Sep 2006

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