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Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O3PbTiO3 films grown on (100)cSrRuO3||(100)SrTiO3 substrates by metal-organic chemical vapor deposition

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10 Author(s)
Yokoyama, Shintaro ; Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan ; Okamoto, Satoshi ; Funakubo, Hiroshi ; Iijima, Takashi
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Relaxor-type ferroelectric (1-x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN-PT) films, 2–3 μm in thickness, with a PbTiO3 content (x) ranging from 0 to 1 were grown on (100)cSrRuO3||(100)SrTiO3 substrates at 650 °C by metal-organic chemical vapor deposition. The effects the x value had on the crystal structure, dielectric and ferroelectric properties, and mechanical response of these films were systematically investigated. Epitaxial growth having (100)/(001) orientation irrespective of x and the constituent phase change with x were ascertained from both x-ray diffraction reciprocal space mapping analysis and Raman spectroscopy. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase, with increasing x. The mixed phase region was found to exist at x=0.40–0.55, which was different from that reported for single crystals (x=0.31–0.35). The dependencies of relative dielectric constant and remanent polarization on x showed a similar trend in the case of a PMN-PT sintered body; however, the magnitudes of these values were relatively low. The effective longitudinal piezoelectric coefficient (d33,f) and the transverse coefficient (e31,f) of 100–120 pm/V and ∼-11.0 C/m2 were, respectively, calculated for a film with x=0.39, which corresponds to a larger x edge for the rhombohedral (pseudocubic) region following the engineered domain concept proposed for PMN-PT single crystals.

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Journal of Applied Physics  (Volume:100 ,  Issue: 5 )