By Topic

Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Nie, D. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Mei, T. ; Tang, X.H. ; Chin, M.K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 °C, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 °C when the group V sublattice interdiffusion becomes appreciable.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 4 )