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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:100 Issue:4 Help

Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

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6 Author(s)
Nie, D. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Mei, T. ; Tang, X.H. ; Chin, M.K.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2227267 

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 °C, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 °C when the group V sublattice interdiffusion becomes appreciable.

Published in:
Journal of Applied Physics  (Volume:100 ,  Issue: 4 )

Date of Publication: Aug 2006

Page(s):
046103 - 046103-3
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2227267
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 2006

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