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Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

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6 Author(s)
Nie, D. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Mei, T. ; Tang, X.H. ; Chin, M.K.
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Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 °C, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 °C when the group V sublattice interdiffusion becomes appreciable.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 4 )