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Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

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8 Author(s)
Oshima, M. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Takahashi, H. ; Okabayashi, J. ; Toyoda, S.
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We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N 1s can be correlated with electron trapping. Photoelectron spectra and O K-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 3 )