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Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy

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2 Author(s)
Tzeng, S.D. ; Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan, Republic of China ; Gwo, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2218025 

Charge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370 °C and assuming that the dominant charge decay mechanism is thermal emission followed by oxide tunneling, we find that there are considerable deep trap centers at the nitride-oxide interface. For electron, the interface trap energy and density were determined to be about 1.52 eV and 1.46×1012 cm-2, respectively. For hole, these are about 1.01 eV and 1.08×1012 cm-2, respectively. In addition, the capture cross section of electron can be extracted to be 4.8×10-16 cm2. The qualitative and quantitative determination of charge trapping properties and possible charge decay mechanism reported in this work can be very useful for the characterization of oxide-nitride-silicon based charge storage devices.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 2 )

Date of Publication:

Jul 2006

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