Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

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Low temperature photoluminescence and optical absorption studies on 200 MeV Ag⁺¹⁵ ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag⁺¹⁵ ion irradiation with a fluence of 1×10¹² ions/cm². The photoluminescence spectrum of pure ZnO thin film was characterized by the I₄ peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t_2g and 2e_g levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag⁺¹⁵ ion irradiation.

Published in:
Journal of Applied Physics (Volume:100 , Issue: 11 )

Date of Publication: Dec 2006

Page(s):: 113708 - 113708-5
ISSN :: 0021-8979
Digital Object Identifier :: 10.1063/1.2399893
Product Type:: Journals & Magazines

Date of Current Version :: 18 June 2009
Issue Date :: Dec 2006

Author(s)

Kumar, Ravi
Materials Science Division, Inter-University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110067, India
Singh, Fouran ; Angadi, Basavaraj ; Choi, Ji-Won ; Choi, Won-Kook ; Jeong, Kwangho ; Song, Jong-Han ; Khan, M.Wasi ; Srivastava, J.P. ; Kumar, Ajay ; Tandon, R.P.