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Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

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11 Author(s)
Kumar, Ravi ; Materials Science Division, Inter-University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110067, India ; Singh, Fouran ; Angadi, Basavaraj ; Choi, Ji-Won
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Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1×1012 ions/cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t2g and 2eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 11 )