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Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2

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2 Author(s)
Ozaki, Shunji ; Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan ; Adachi, Sadao

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Optical-absorption and photoluminescence (PL) spectra have been measured on the ternary chalcopyrite semiconductor AgInSe2 at T=13–300 K. The direct-band-gap energy Eg of AgInSe2 determined from the optical absorption measurements shows unusual temperature dependence at low temperatures. The resultant temperature coefficient ∂Eg/∂T is found to be positive at T≪125 K and negative above 125 K. The PL spectra show asymmetric emission bands peaking at ∼1.18 and ∼1.20 eV at T=13 K, which are attributed to donor-acceptor pair recombinations between exponentially tailed donor states and acceptor levels. An energy-band scheme has been proposed for the explanation of the peculiar PL emission spectra observed in AgInSe2.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 11 )