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Depth profile of the biaxial strain in a 10 μm thick InN (0001) film

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9 Author(s)
Arvanitidis, J. ; Physics Division, School of Technology, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece ; Christofilos, D. ; Kourouklis, G.A. ; Delimitis, A.
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Raman spectroscopy is employed to study the evolution of the residual stresses along the growth direction of an ∼10 μm thick wurtzite InN film. The analysis of the spectra, recorded with the excitation laser beam being parallel as well as perpendicular to the c axis of the film, clearly reveals the compressive character of the biaxial strain in the InN layer. The residual compressive strain increases with increasing distance from the InN/GaN interface in agreement with the transmission electron microscopy observations, which additionally reveal that this is accompanied by a reduction of the threading dislocation density. The interplay between the epilayer/template lattice mismatch and the thermal expansion coefficients may account for these observations.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 11 )