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Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

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6 Author(s)
Kim, Jong Hoon ; Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea ; Ahn, Byung Du ; Lee, Choong Hee ; Jeon, Kyung Ah
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Ga doped ZnO (GZO) thin films were prepared by pulsed laser deposition on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate their dependence on oxygen pressure and rapid thermal annealing (RTA) temperature. High quality GZO films with a low resistivity of 2.92×10-4 Ω cm and a transparency above 94% were able to be formed at an oxygen pressure of 3×10-2 Torr and a RTA temperature of 400 °C. A four point probe method, x-ray diffraction, atomic force microscopy, and ultraviolet–near-infrared grating spectrometer are used to investigate the properties of GZO films.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 11 )