By Topic

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kim, Jong Hoon ; Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea ; Ahn, Byung Du ; Lee, Choong Hee ; Jeon, Kyung Ah
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ga doped ZnO (GZO) thin films were prepared by pulsed laser deposition on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate their dependence on oxygen pressure and rapid thermal annealing (RTA) temperature. High quality GZO films with a low resistivity of 2.92×10-4 Ω cm and a transparency above 94% were able to be formed at an oxygen pressure of 3×10-2 Torr and a RTA temperature of 400 °C. A four point probe method, x-ray diffraction, atomic force microscopy, and ultraviolet–near-infrared grating spectrometer are used to investigate the properties of GZO films.

Published in:

Journal of Applied Physics  (Volume:100 ,  Issue: 11 )